Raman modes in transferred bilayer CVD graphene

Observation of low energy Raman modes in twisted bilayer graphene.

Two new Raman modes below 100 cm(-1) are observed in twisted bilayer graphene grown by chemical vapor deposition. The two modes are observed in a small range of twisting angle at which the intensity of the G Raman peak is strongly enhanced, indicating that these low energy modes and the G Raman mode share the same resonance enhancement mechanism, as a function of twisting angle. The ~94 cm(-1) ...

Interface properties of CVD grown graphene transferred onto MoS2(0001).

Heterostructures of dissimilar 2D materials are potential building blocks for novel materials and may enable the formation of new (photo)electronic device architectures. Previous work mainly focused on supporting graphene on insulating wide-band gap materials, such as hex-BN and mica. Here we investigate the interface between zero-band gap semiconductor graphene and band-gap semiconductor MoS2 ...

Raman spectra of misoriented bilayer graphene

Raman spectra of out-of-plane phonons in bilayer graphene

Kentaro Sato,1 Jin Sung Park,2 Riichiro Saito,1 Chunxiao Cong,3 Ting Yu,3,4 Chun Hung Lui,5 Tony F. Heinz,5 Gene Dresselhaus,6 and Mildred S. Dresselhaus7,8 1Department of Physics, Tohoku University, Sendai 980-8578, Japan 2Faculty of Engineering, Shinshu University, Nagano 380-8553, Japan 3Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technologi...

Valley Chern numbers and boundary modes in gapped bilayer graphene.

Electronic states at domain walls in bilayer graphene are studied by analyzing their four- and two-band continuum models, by performing numerical calculations on the lattice, and by using quantum geometric arguments. The continuum theories explain the distinct electronic properties of boundary modes localized near domain walls formed by interlayer electric field reversal, by interlayer stacking...